• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask for reactive ion etching and a device thereof, and more particularly, to a dry etching apparatus of a magnetic material useful for manufacturing components of micromachines such as magnetic disks and magnetic direct circuits and magnetostrictive actuators. The present invention relates to a novel reactive ion etching mask and an apparatus thereof. The present invention provides a new mask material and a process technology using the same to realize reactive ion etching of magnetic materials at a higher etching rate, to enable easy and high resolution and etching at the same time, and to produce a forge type. And a process of etching the magnetic material by a reactive ion etching method by plasma of a mixed gas of carbon monoxide and a nitrogen compound to provide an apparatus, wherein a resist film is formed on the surface of the magnetic material thin film formed on the substrate. After exposing and developing one multilayer film to form a predetermined pattern in the resist film, the mask material was vacuum deposited, the polymer resist was dissolved and a mask was formed, and then a mixture of carbon monoxide and a nitrogen-containing compound gas was applied. As a mask of a magnetic thin film by reactive ion etching by plasma Characterized in that the magnetic material film by removing the non-repeat portion to form a pattern, to obtain a magnetic material subjected to fine processing.
    公开号:KR19990029988A
    申请号:KR1019980038946
    申请日:1998-09-21
    公开日:1999-04-26
    发明作者:이사오 나카타니
    申请人:오카다 마사토시；카가쿠기쥬쯔죠 킨조쿠자이료 기쥬쯔켄큐죠；마쯔오 미쯔요시；카가쿠키쥬쯔 신코지교단；
    IPC主号:
    专利说明:

    Reactive ion etching method and apparatus
    The present invention relates to a mask for reactive ion etching and a device thereof. More specifically, the present invention relates to a magnetic head used for writing to and reading from a magnetic disk, a microtransmitter embedded in a magnetic integrated circuit, a microinductor, a magnetic sensor, a spin scattering magnetoresistive element, a spin valve element, and a ferromagnetic tunnel. (tunnel) Drying of magnetic materials useful for manufacturing a group of quantum effect magnetic devices such as junction elements, spin field effect elements, spin diodes, spin transistors, or components of micromachines such as thin film magnets and magnetostrictive actuators. A novel reactive ion etching mask characterized by an etching apparatus and the like and an apparatus thereof.
    In general, micro-semiconductor devices such as ultra-LSI and magnetic devices are manufactured by combining two processes, a lithography technique and an etching technique.
    Lithography technology is a technique for making a fine shape on a photoresist film such as a resist film coated on the surface of a workpiece (thin film of a semiconductor and a thin film of a magnetic material). There is an electron beam lithography technique, as well as an ion beam lithography technique that photosensitizes using an ion beam.
    In addition, the etching technique is a technique for fabricating a device by transferring a resist pattern made of lithography to a semiconductor thin film and a magnetic thin film of the workpiece.
    Etching techniques include wet etching, argon ion milling and reactive ion etching. Among these etching methods, the reactive ion etching method is the method that can transfer the lithography-produced pattern most accurately, is most suitable for micromachining, has a low etching rate, and is the best method. In reality, semiconductor integrated circuits and semiconductor memories are manufactured by this method.
    The reactive ion etching method sequentially removes atoms on the surface of a workpiece chemically and physically by ions incident perpendicularly to the surface of the workpiece by applying an electric field to the workpiece in the plasma of the reactive gas. An anisotropic processing in which a portion not covered with the mask is connected to the boundary of the mask and is cut vertically into the mask is possible. This is a method capable of transferring fine and sharp shapes. In the reactive ion etching method, chemically active species such as ions and radicals of a reactive gas generated in plasma are adsorbed onto the surface of the workpiece, chemically react with the workpiece, and a surface reaction layer having a low binding energy is first formed. Thus, because the surface of the workpiece is exposed to the vertical impact of the accelerated positive ions at the boundary in the plasma, the loosely bonded surface reaction layer is peeled off by the spattering or evaporation of ions. Goes. Thus, reactive ion etching is a process in which chemical and physical actions occur simultaneously. As a result, the selectivity of etching only a specific substance is obtained, and at the same time, another anisotropy of breaking perpendicularly to the surface of the material to be processed is obtained.
    However, on the one hand, the long-term effective reactive ion etching method for magnetic materials has not been found. In practice, wet etching and argon ion milling methods are used for magnetic materials, whereby thin film magnetic heads, magnetic sensors, and microtransistors are manufactured. It is becoming.
    This situation in magnetic materials has significantly delayed the direction of miniaturization and high-density directing of magnetic materials as compared to semiconductors, which has been an obstacle to power generation.
    The reason that the reactive ion etching method is difficult for the magnetic material is that the magnetic material mainly composed of the transition metal element is used for all etching gases developed for semiconductor materials (eg CF 4 , CCl 4 , CCl 2 F 2 , CClF 3). , CBrF 3 , Cl 2 , C 2 F 6 , C 3 F 8 , C 4 F 10 , CHF 3 , C 2 H 2 , SF 6 , SiF 4 , BCl 3 , PCl 3 , SiCl 4 , HCl, CHClF 2, etc. ) Reacts in the magnetic material and the plasma, but it is difficult to undergo sputtering because it generates a material having a very large bonding energy compared with the reaction product of the semiconductor material, and thus is not etched.
    Therefore, efforts have been made to explore new reactive ion etching reactions without inferring from semiconductor technology, and the inventors of the present invention have recently invented a method of using a mixed gas plasma of carbon oxide (CO) gas and ammonia gas (NH 3 ). It became. This method uses transition metal carbonylides (Fe (CO) 5 , Ni (CO) 4 , Co 2 (CO) 8 ,) on the surface of a magnetic material composed mainly of transition metal elements as a work material by CO active radicals. Mn 2 (CO) 10 , Cr (CO) 6 , V (CO) 6 , Mo (CO) 6 , W (CO) 6 } to form and evaporate them under vacuum or sputtering by ions. It is a principle to peel off and to etch. Transition metal carbonylide is the only compound having low binding energy among the transition metals. However, in the plasma, the CO gas is decomposed into CO 2 and C by disproportionation reaction, so the introduced CO gas does not contribute to the reaction, and the free C atom reacts with the transition metal element and generates a stable transition metal carbide. Therefore, the etching reaction does not usually occur. The NH 3 gas exhibits a property of delaying the disproportionation reaction in the presence of a transition metal element, and the target reactive ion etching proceeds in the plasma of a gas almost equally mixed with CO gas and NH 3 gas.
    By the method based on this principle, the realization of reactive ion etching of a magnetic material (Fe-Ni alloy), Co-Cr alloy, Fe, etc. is confirmed. In this way, excellent reactive ion etching methods have been developed for magnetic materials, and thus technical developments are expected in the future. In this method, however, micro-machining and anisotropic shapes can be processed, but the etching speed is 34 nm /, for example. The problem with min is not that fast.
    In addition, in the conventional method, in order to perform etching by CO-NH 3 mixed gas plasma, SiO 2 film formed by sputtering method is used as a mask material which is hardly subjected to this etching reaction, and thus the processing precision and productivity are limited. There is a problem that there is.
    This conventional process is shown in FIG.
    The starting form is as shown in FIG. 2A, by sputtering a magnetic alloy of the material to be processed, for example, a Pharmaloy (Fe-Ni alloy) 2 or the like, on a suitable substrate material such as a Corning 7059 glass substrate 1 or the like. And a quartz (SiO 2 ) thin film 3 as a mask material thereon, and an amorphous carbon film 4 thereon as an example of a conductive material thereon by a sputtering method, and further, the resist 5 of the electron beam photosensitive film is formed. For example, it is applied by spin coating. In this case, the amorphous carbon film 4 is a conductive layer necessary to prevent the target material from charging when the electron beam is exposed, and is a film required because the quartz (SiO 2 ) thin film 3 is an insulator. As shown in Fig. 2B, a desired figure is formed in the resist by electron beam drawing and development. Thereafter, the amorphous carbon layer is etched using a resist drawing as a mask by oxygen ion etching, and the SiO 2 film is lightly exposed to the figure (FIG. 2C). Next, SiO 2 is etched using, for example, a plasma of tetrafluorocarbon (CF 4 ) gas, and the figure is transferred to the SiO 2 film. Since ion etching of CF 4 is effective only for SiO 2, it does not change the perm of the target material to be processed (FIG. 2D).
    The figure transferred to SiO 2 is transferred to the perm by the reactive ion etching method using the above-described CO-NH 3 mixed gas plasma using the figure of SiO 2 obtained as a mask as a mask. In this process, the resist film and the amorphous carbon film are also removed by etching at the same time, and the transfer is completed in a form in which SiO 2 remains on the permogram (FIG. 2E). Until now, micromachining has been performed by reactive ion etching of a magnetic material (Fe-Ni alloy), Co-Cr alloy, Fe, etc. of the magnetic material according to the present method.
    However, the above process is not only complicated and has a problem of poor productivity, but also has a problem that high precision of the transfer figure is not obtained because the transfer is performed twice. This method is to leave the figure corresponding to the part which was not exposed by the electron beam finally, As a result, the figure which reversed the figure exposed by the electron beam, ie, the negative figure, is left. However, in the process of producing a complex and fine structure of the magnetic material, it is also necessary to obtain a figure (positive shape) corresponding to the portion exposed to the electron beam.
    However, the present invention is to solve this problem of the prior art, to realize the reactive ion etching of the magnetic material by the higher etching rate, and also to enable the etching with a simple and high decomposition function and high precision It is an object of the present invention to provide a new mask material, a process technology using the same, and an apparatus thereof, which make it possible to manufacture a forged type at the same time.
    1 is a microprocessing process diagram of a magnetic material according to the present invention;
    2 is a microfabrication process diagram of a magnetic material of the prior art,
    3 is a cross sectional view of a balanced flat reactive ion etching apparatus;
    4 is a cross-sectional view of an inductively coupled reactive ion etching apparatus;
    5 is a cross-sectional view of the structure of an electron cyclotone resonance type reactive ion etching apparatus,
    6A, 6B, and 6C are drawing substitute electron micrographs illustrating the state after etching, respectively.
    Explanation of symbols on the main parts of the drawings
    1. Substrate material 2. Magnetic material thin film 3. Silicon oxide (SiO 2 ) film
    4. Amorphous Carbon Film 5. Resist Film 6. Resist Pattern
    7. Mask material vacuum deposited 8. Mask
    9. Magnetic material subjected to fine processing 10. Reaction vessel
    11. Protective plate 12. Grounding electrode 13. Support plate
    14. High frequency electrode 15. Zero potential shield 16. Conductance control valve
    17. Field Sul frangipani during installation
    19. Observation window 20. High frequency power 21. Coolant
    22. Coil antenna 23. Quartz window 24. Solenoid coil
    25. Microwave Waveguide
    MEANS TO SOLVE THE PROBLEM This invention solves the said subject, The magnetic material thin film formed on the board | substrate in the process of etching a magnetic material by the reactive ion etching method by the plasma of the mixed gas of carbon monoxide and a nitrogen compound. After the electron beam exposure and development of a multilayer film having a resist film formed on its surface, and the formation of a predetermined pattern on the resist film, the mask material is vacuum deposited, the polymer resist is dissolved and a mask is formed. Next, carbon monoxide and nitrogen-containing Reactive ion etching characterized in that a pattern is formed on a magnetic thin film by removing a portion not covered with a mask of the magnetic thin film by a reactive ion etching method by plasma of a mixed gas with a compound, thereby obtaining a magnetic material subjected to micromachining. Provide the law (claim 1).
    In the present invention, the mask may be titanium, magnesium, aluminum, germanium, platinum, palladium, or an alloy or a compound containing two or more of these as a main component. The above structure (claim 2), wherein the mask used for reactive ion etching is composed of silicon or an alloy containing silicon as a main component (claim 3), and the mask used for reactive ion etching is composed of a compound of silicon It also provides a mask (claim 4) formed by lift-off disposed on the pattern from the resist film.
    In addition, the present invention relates to a reaction vessel of a device used for reactive ion etching and a metal part in the reaction vessel, wherein at least one selected from the group consisting of titanium, aluminum, or alloys each of which or both thereof are main components. Provided is a reactive ion etching apparatus (claim 5) comprising a metal phase.
    Furthermore, in the above apparatus, the reaction vessel and the components in the reaction vessel are composed of the at least one metal in the surface layer of which part or all of them are exposed (claim 6). Support body consisting of one or more of the above metals (claim 7), one or more components of a high frequency electrode, a high frequency antenna, a grounding electrode, a zero potential shield, and a protective plate composed of the one or more metals ( Claim 8) is provided as one of its aspects.
    The present invention relates to a mask for reactive ion etching and a reactive ion etching apparatus for use in etching a magnetic material as a reactive ion etching method by plasma of a mixed gas of carbon monoxide and a nitrogen compound.
    These inventions are explained in detail below.
    (a) Mask for reactive ion etching
    Conventionally, the mask material which has been mainly used for semiconductor technology was a resist itself as a polymer material. However, various polymer resists consumed a lot in CO-NH 3 gas plasma and thus could not play a role as a mask. Metal elements such as Cr, W, Mo, Mn, Nb, Ta, Fe, Ru, Os, Co, Rh, Ir, Ni, Cu, Ag, Au, Ca, In, Sn, and alloys and compounds containing them as main components It is not suitable as a material because it reacts with CO-NH 3 gas plasma, and itself is etched and consumed by the sputtering action. In addition, Zn, Cd, Pb or an alloy or compound containing these as a main component has poor vacuum resistance and is not suitable as a mask material. On the other hand, it has become clear from the experiments that Ti, Mg, Al, Si, Ge, Pt and Pd and alloys or compounds containing these as main components are difficult to react with CO-NH 3 gas plasma and are suitable as mask materials. Among these, in terms of chemical stability, island density of crystal grains, and difficulty in pinhole formation, the most desired substance was an alloy or a compound containing Ti and Ti as a main component.
    Therefore, in the present invention, the mask is made of Ti, Mg, Al, Si, Ge, Pt, Pd and at least one of each of these or two or more alloys or compounds thereof. That is, Ti, Mg, Al, and Ge, Pt, and Pd, their respective group metals, Ti alloys, Mg alloys, Al alloys, Ge alloys, Pt alloys, Pd alloys, Ti-Mg alloys, Ti-Al alloys, and Ti- Ge alloy, Ti-Pt alloy, Ti-Pd alloy, Mg-Al alloy, Mg-Ge alloy, Mg-Pt alloy, Mg-Pd alloy, Al-Ge alloy, Al-Pt alloy, Al-Pd alloy, Ge- Pt alloy, Ge-Pd alloy, Ti-Mg-Al alloy, Ti-Al-Ge alloy, Ti-Mg-Ge alloy, Ti-Mg-Pt alloy, Ti-Al-Pd alloy, Mg-Al-Ge alloy, TiO 2 , MgF 2 , Al 2 O 3 . The mask is constituted by at least one of TiN, AlN, MgN, GeO 2 , PdO, and the like. In this case, the provision of "at least one kind" means that the entire mask may be composed of only one of them, and the exposed surface layer of the mask may be composed of a plurality of species by its partial composite or lamination thereof. It means.
    Furthermore, in the present invention, a compound such as silicon or an alloy containing silicon as a main component, and SiO 2 , Si 3 N 4, etc. can also be used as a mask. The alloy of silicon is exemplified as being good in combination with Ti, Mg, Al, Ge and the like. For example, Ti-Si alloys, Si-Al alloys, Si-Ge alloys, Si-Pt alloys, Si-Pd alloys, Ti-Si-Al alloys, Ti-Mg-Si alloys, Al-Mg-Si alloys, etc. It becomes.
    For SiO 2, but is used as a mask and reviewed so far, yet the way until 2 outages's. In contrast, in the present invention, liftoff is used as a novel mask.
    These masks can be formed by various means such as vacuum deposition, sputtering and ion plating, and ion beam deposition.
    The mask of the present invention is illustrated as a process of micromachining as shown in FIG. 1. As shown in Fig. 1A, the start of the micromachining process is performed by forming a magnetic thin film 2 to be processed on a suitable substrate material 1 such as Corning 7059 glass, and spin thereon, for example, with a resist film 5 thereon. It is formed by the coat method. The multilayer film is subjected to electron beam exposure, development, and a predetermined pattern 6 is formed in the resist film 5 (FIG. 1B). Thereafter, a mask material, for example, Ti (7) is vacuum deposited, a lift-off method, that is, a polymer resist is dissolved and a Ti mask 8 is formed (FIG. 1D). Next, a pattern is formed on the magnetic thin film by removing only the portions that are not covered by the Ti mask of the magnetic thin film by the reactive ion etching method using the CO-NH 3 mixed gas plasma (FIG. 1E). A magnetic body 9 subjected to micromachining is obtained. In addition, in this process, since the Ti mask is left without being removed, when the Ti mask is to be removed, the remaining Ti mask is removed by the reactive ion etching method of the conventional method using, for example, CCl 4 gas plasma (FIG. 1F). ).
    In any case, reattachment of contaminants to the material to be etched according to the present invention is not recognized, and a sharp and accurate shape can be etched. In addition, the material to be etched in the present invention is representative of the magnetic material as described above, and the magnetic material is a magnetic material mainly composed of transition metals including transitional metals such as Fe, Ni, Co, Co- Cr alloys, Sendust alloys, Mo, rare earths, alloys and compounds of these elements are preferred.
    In addition, when using the resist film for mask pattern formation, the thing of each kind of organic polymer film | membrane by the exposure shape like the conventional one is used. Of course, direct mask formation may be sufficient. When the plasma gas in the etching is a magnetic material, the case of the CO gas and the nitrogen-containing nitrogen gas of NH 3 or amines is suitably used as described above.
    (b) Reactive ion etching apparatus.
    Next, the reactive ion etching apparatus used at the time of reactive ion etching by the CO-NH 3 mixed gas plasma shown in FIG. 1E in the micromachining process of the present invention will be described.
    In the prior art, the reactive ion etching apparatus is made of a reaction vessel, and components inside the reaction vessel are mainly made of stainless steel. Stainless steel is an alloy mainly composed of transition metals such as iron, nickel, and chromium, and has a composition similar to that of magnetic materials. Therefore, when the reactive ion etching using the mixed gas plasma of the CO gas and the NH 3 gas is performed on the magnetic alloy containing the transition metal as a main component using a conventional reactive ion etching apparatus, the etching target material is etched. At the same time, the member holding the reaction vessel, the electrode, and the material to be etched and all the members in contact with the plasma around it are subjected to the etching action. For this reason, the inside of the reaction vessel is corroded, and a problem arises in that all of the reactive gas plasma generated at the same time cannot effectively act on the material to be etched. This causes contamination of the material to be etched and at the same time brings about various undesirable results such as slowing down the etching rate.
    Thus, in order to solve this problem, in the present invention, at least a part of the reaction vessel and the constituent metal parts in the reaction vessel are replaced with conventional stainless steel, such as titanium (Ti), Ti alloy, aluminum (Al), Al alloy or Ti-. It is made of Al alloy.
    In this case, at least "partial" provisions are liable to be etched by plasma by a mixed gas of CO gas and NH 3 gas, or a gas and mixed gas of amines as a CO gas and a nitrogen compound in view of the object of the present invention. It is defined as a part or a part where large reactive ion etching will adversely affect. In the case of actually constituting the apparatus, the plasma generation and the method for introducing the plasma in the various parts arranged in the container, including the reaction vessel body or its inner surface, the gas introduction system and the discharge system, In consideration of the size and the like, it is understood that "parts" or all of them are based on the above metals.
    For example, Figures 3, 4, and 5 illustrate the parallel planar plasma device, the inductively coupled plasma device, and the electron microtron resonance plasma device in the above manner, but for these devices, The components up to now consist of Ti and Al alone or their respective alloys or alloys of all but some or all of the glass and coolant fill nonmetal parts.
    As a result of actual experiment on each of Ti, Al, Cu, or conventional stainless steel, the inside of reaction vessel such as support, high frequency electrode, zero potential solder, ground electrode and support, shot, bolt and nut supporting the material to be etched The best effect was obtained when all the metal members were made from Ti. That is, in the process of reactive ion etching, the rate at which these members made of Ti were corroded and abrasion was hardly observed as compared with that of stainless steel, and the Pharmaroy (80% Ni-Fe alloy) of the material to be etched was also observed. And the etching rates for the 10% Cr-Co alloy were improved to 120 nm / min and 140 nm / min, respectively, about four times. Moreover, reattachment of contaminants to the etching target material is not recognized, and the etching of the sharp and accurate shape is possible. Moreover, the parts that most significantly affected these working effects were the support and the ground electrode supporting the material to be etched. Ti for constituting the part was most suitable in terms of its excellent vacuum resistance and mechanical strength, as well as workability such as weldability, vacuum resistance, bending workability and cutting property. Of course, in addition to pure Ti, Ti alloys satisfying these conditions may be various, and suitable ones include Ti-Pd alloy, Ti-Ta alloy, Ti-Al-Sn alloy, Ti-Al-V-Mo alloy, and Ti. -Al-Sn-Zr-Mo-Si alloy, Ti-Al-Zr-Mo-Sn alloy, Ti-Al-V alloy, Ti-Al-Sn-Zr-Mo alloy, Ti-Al-V-Sn alloy, Ti-V-Cr-Al alloy etc. are mentioned.
    The same effect as the pure Al was shown. In terms of weldability and strength, more care was required than Ti. Of course, in addition to pure Al, Al-Cu-X 1 (X 1 is an additional element such as Si, Mn, Mg), Al-Mn-X 2 alloy (X 2 is an additional element such as Mg, Si), Al-Mg- The effect was the same even when X 3 alloy (X 3 is Zn, Si, Cr, Mn, Mg, etc.) and Al-Si-X 4 alloy (X 4 is an additional element such as Mg, Cu, Cr, etc.).
    Alloys based on pure Cu and Cu did not show any particularly descriptive effect compared to stainless steel. The present invention realizes efficient ion etching of magnetic materials by the larger etching rate by the above-described configuration, and enables easy and high resolution and high precision etching, and at the same time, it is possible to produce a forged type. The present invention provides a novel mask material, a process technology using the same, and an apparatus thereof. However, the characteristics of the effect will be described in detail according to the following examples. Of course, this invention is not limited to the following examples.
    EXAMPLE
    Example 1 (Fine Processing of Fe Thin Film Using Ti Mask)
    According to the process shown in FIG. 1, reactive ion etching is performed using the reactive ion etching apparatus of this invention. In addition, in this apparatus, the internal all metal parts containing a reaction container were made from pure Ti.
    As a sample for etching, a 450 nm thick Fe thin film was formed on the glass substrate 1 of Corning 7050 by the sputtering method as a magnetic material thin film 2, and the resist film 5 was formed on the surface by electron beam lithography and lift-off method. Ti is used as the mast material 7 on the formed pattern 6, and a small number of Ti pads are formed and used as the mask 8. This sample was placed on the lower electrode to which the high frequency 13.56 MHz high frequency water was applied, and set the distance of the high frequency electrode and the ground electrode opposite to it to 35 nm. The CO gas and NH 3 gas were exhausted with a turbomolecular pump while being supplied to the reaction vessel at flow rates of 6.3 kPa / min and 6.8 kPa / min, respectively, and the inside was held at a pressure of 5.7 × 10 −3 Torr. A high frequency of 3.7 W / cm 2 per electrode unit area was applied to the lower electrode holding the sample, and glow discharge plasma of CO-NH 3 mixed gas was generated to perform reactive ion etching. Etching time was 4.0 minutes.
    After the etching reaction in the above-described process, the step difference generated between the portion covered with the Ti pad used as the mask 8 and the portion not covered was repeatedly measured with a reflection interferometer to obtain the etching amount per unit time. In addition, the shape produced by etching was observed with an electron microscope, and the etching was evaluated by paying attention to the smoothness and sharpness of the step and the presence of contaminants and reattachment materials. The Fe thin film patterned as the fine magnetic body 9 was obtained. As a result, the etching rate for the Fe thin film is 90 nm / min. Moreover, the curvature radius was about 0.1 micrometer, and the shape of depth 400nm could be manufactured.
    For example, FIG. 6 shows a case of Ti mask
    (a) Fe thin film
    (b) Co-9.8% Cr thin film
    (c) Ni-20% Fe thin film
    It is an electron microscope photograph illustrating the result of etching, and it is understood that excellent processing precision is obtained.
    Comparative Example 1 (Fine Machining of Pharmaroy (80% Ni-Fe) Alloy Thin Film Using Ti Mask
    Reactive ion etching of 80% Ni-Fe alloy was possible under the same conditions as in Example 1. The speed of etching was 120 nm / min, and the shape of etching was similarly good.
    Comparative Example 2 (Micromachining of 10% Cr-Co Alloy Using Ti Mask)
    Reactive ion etching of 10% Cr-Co alloy was possible under the same conditions as in Example 1. The speed of etching was 140 nm / min, and the shape of etching was similarly good.
    Example 2 (Al mask)
    Al was vacuum-deposited under the same conditions as in Example 1, an Al mask was prepared by a lift-off method, and reactive ion etching of Ni-Fe 20% Fe alloy was possible. The speed of etching was 120 nm / min, and the shape of etching was similarly good.
    Example 3 (Si mask)
    Si was vacuum-deposited under the same conditions as in Example 1, a Si mask was produced by a lift-off method, and reactive ion etching of a Co-9.8% Cr alloy was possible. The speed of etching was 140 nm / min, and the shape of etching was similarly good.
    Example 4 (Ge Mask)
    Ge was vacuum-deposited under the same conditions as in Example 1, a Ge mask was produced by the lift-off method, and reactive ion etching of a Co-9.8% Cr alloy was possible. The speed of etching was 140 nm / min, and the shape of etching was similarly good.
    As described in detail above, by using the reactive ion etching apparatus of the present invention, reactive ion etching using CO-NH 3 mixed gas plasma or the like for magnetic alloys is more effective than when using the conventional reactive ion etching apparatus. do. That is, the etching rate for the magnetic alloy is about four times under the same etching conditions, contributing to the improvement of the working efficiency. In addition, the material to be etched is not contaminated in the etching process, and the reattachment of the material removed by the etching can be reduced so that it does not become a problem.
    By the above effects, the magnetic recording micro magnetic head, microtrans, micro magnetic element, magnetic sensor, magnetoresistive element, spin diode and spin transistor, spin valve element, spin valve magnetic memory, tunnel magnetoresistance effect element Etc. manufacture becomes possible. In addition, it is possible to manufacture a patterned magnetic recording medium or the like of a high density magnetic recording medium in the future.
    权利要求:
    Claims (8)
    [1" claim-type="Currently amended] In the process of etching a magnetic material by the reactive ion etching method by the plasma of the mixed gas of carbon monoxide and nitrogen compound, the multilayered film which formed the resist film on the surface of the thin film of magnetic material formed on the board | substrate is electron-exposed, After developing and forming a predetermined pattern in the resist film, the mask material is vacuum deposited, the polymer resist is dissolved and a mask is formed, and then reactive ion etching by plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound. A reactive ion etching method, wherein a pattern is formed on a magnetic thin film by removing a portion not covered with a mask of the magnetic thin film by a method to obtain a magnetic body subjected to micromachining.
    [2" claim-type="Currently amended] The method of claim 1, wherein the mask used for reactive ion etching is composed of one or more of titanium, magnesium, aluminum, germanium, platinum, palladium, and alloys or compounds each of which are two or more thereof. Reactive ion etching method.
    [3" claim-type="Currently amended] The reactive ion etching method according to claim 1, wherein the mask used during the reactive ion etching is made of silicon or an alloy containing silicon as a main component.
    [4" claim-type="Currently amended] 2. The reactive ion etching method according to claim 1, wherein the mask used during the reactive ion etching is made of a compound of silicon and formed into a mask by lift-off disposed on the pattern from the resist film.
    [5" claim-type="Currently amended] In the reaction vessel of the apparatus used for the reactive ion etching and the metal parts in the reaction vessel, some or all of them are composed of one or more kinds of metals selected from the group consisting of titanium, aluminum, or alloys each of which or both thereof are main components. Reactive ion etching apparatus characterized in that.
    [6" claim-type="Currently amended] 6. The reaction vessel and components in the reaction vessel according to claim 5, wherein in the surface layer to which some or all of them are exposed, some or all of them are selected from the group of alloys composed mainly of titanium, aluminum or each or both thereof. Reactive ion etching apparatus characterized by the above-mentioned.
    [7" claim-type="Currently amended] 7. A support according to claim 5 or 6, wherein the support for supporting the material to be etched is composed of one or more metals selected from the group consisting of titanium, aluminum, or alloys each of which or both of which are main components thereof. Reactive ion etching apparatus characterized by the above-mentioned.
    [8" claim-type="Currently amended] 7. The alloy according to claim 5 or 6, wherein at least one of the components of the high frequency electrode, the high frequency antenna, the ground electrode, the zero potential shield and the shielding plate is made of titanium, aluminum, or an alloy each of which or both thereof are main components. Reactive ion etching apparatus characterized by consisting of at least one metal selected from the group.
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    同族专利:
    公开号 | 公开日
    US6391216B1|2002-05-21|
    GB2331273A|1999-05-19|
    US20020079054A1|2002-06-27|
    GB9820639D0|1998-11-18|
    GB2331273B8|2016-06-22|
    GB2331273A8|2016-06-22|
    KR100397860B1|2003-12-18|
    GB2331273B|2002-04-24|
    GB2331273A9|
    US6669807B2|2003-12-30|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-09-22|Priority to JP97-256635
    1997-09-22|Priority to JP09256635A
    1997-09-22|Priority to JP97-256636
    1997-09-22|Priority to JP09256636A
    1998-09-21|Application filed by 오카다 마사토시, 카가쿠기쥬쯔죠 킨조쿠자이료 기쥬쯔켄큐죠, 마쯔오 미쯔요시, 카가쿠키쥬쯔 신코지교단
    1999-04-26|Publication of KR19990029988A
    2003-12-18|Application granted
    2003-12-18|Publication of KR100397860B1
    优先权:
    申请号 | 申请日 | 专利标题
    JP97-256635|1997-09-22|
    JP09256635A|JP3131594B2|1997-09-22|1997-09-22|Reactive ion etching equipment|
    JP97-256636|1997-09-22|
    JP09256636A|JP3131595B2|1997-09-22|1997-09-22|Mask for reactive ion etching|
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